| BRAND | Infineon |
| Product | FP75R12KT4 |
| Description | IGBT Silicon Module |
| Internal code | IMP4672783 |
| Technical specification | Configuration: 3-Phase Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.25 V Continuous Collector Current at 25 C: 150 A Gate-Emitter Leakage Current: 100 nA Pd - Power Dissipation: 385 W |
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