BRAND | Infineon |
Product | FF200R12KT4 |
Description | IGBT Module |
Internal code | ONR4751131 |
Technical specification | Configuration: Dual Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 1.75 V Continuous Collector Current at 25 C: 320 A Gate-Emitter Leakage Current: 400 nA Pd - Power Dissipation: 1100 W |
Discover the superior quality and performance of the Infineon FF200R12KT4 with Onrion LLC in Chile . Whether you are looking for reliability or efficiency, this product meets all your industrial needs.
The FF200R12KT4 is designed to provide optimal performance and durability in various applications. Known for its high-quality construction and innovative features, it is a preferred choice for professionals.
Key Features of FF200R12KT4 :
At Onrion LLC , we offer the FF200R12KT4 at competitive prices and with the fastest delivery times across Chile . Our expert team is ready to assist you with all your inquiries and provide tailored solutions to meet your specific needs.
Why Choose Onrion LLC ?
Get Your Quote Today! Ready to enhance your operations with the FF200R12KT4 ? Contact us now for a personalized quote. Fill out the form below or send us an email with your inquiry. Let us help you make a cost-effective, quality-driven choice for your business.
Important Notice: While we supply Infineon products, Onrion LLC is not an authorized distributor. All rights are reserved by the manufacturers and their official partners.
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